Professor Kong-Thon (Frank) Tsen from the Physics Department is preparing an experiment to study inactivation of microorganisms using fs mode-locking laser.
Professor Bruce Towe from the Bioengineering Department is collaborating with Assistant Research Professor Shui-Qing (Fisher) Yu from the Electrical Engineering Department to investigate inducing high frequency ultra-sound in biological samples using continuous wave laser with extremely low power.
Professor Jose Menendez’s group (Physics Department)
For more information, please contact Professor Jose Menendez.
Low temperature semiconductor optical characterization system.
Professor Cun Zheng Ning’s Group (Electrical Engineering Department)
For more information, please contact Professor Cun Zheng Ning.
Nanowire growth facility
Ti:Sappire fs laser for nanowire characterization
UV Micro-PL system and aIR Micro-PL system (not shown).
Professor Fernando Ponce’s Group (Physics Department)
For more information, please contact Professor Fernando Ponce.
Laboratory for synthesis of GaN nanostructures (PSF-409): Rafael Garcia, Jing Li, Fernando Ponce, Jill Kennedy and Arlinda Hill.
High resolution TEM for lattics imaging of semiconductor heterostructures
Cathodoluminescence laboratory for study of optical properties of semiconductor heterostructures: Ti Li, Alec Fischer, Fernando Ponce, Arlinda Hill and Yu Huang.
CL Laboratory: Ti Li, Yu Huang, Alec Fischer, Arlinda Hill and Fernando Ponce
VG V80H (Chamber A and B)
The other two chambers (chamber A and B) are VG V80H twin-chamber MBE systems. Both the machines are dedicated to the growth of GaAs, InP, GaSb, and InAs based optoelectronic devices; including laser diodes, light emitting diodes, optical refrigeration devices, photodetectors, and photovoltaic devices; with a wavelength ranging from 600 nm to 3 microns.
Temperature and power dependent photoluminescence
The photoluminescence setup is currently equipped with a 50 mW HeNe Laser and a 100 mW semiconductor laser as the light source pump. A spectrometer equipped with a photo multiplier tube (PMT) and a Ge detector is capable of performing temperature photoluminescence measurements and other optical spectral measurements for wavelengths from 400 nm to 1700 nm, at temperature ranging from 8 K to 320 K.
Transmittance and reflectance measurement
A Fourier Transform Infrared Spectrometer (FTIR) equipped with an InGaAs detector, an InSb detector, and a MCT detector is capable of measuring transmittance and reflectance at wavelengths ranging from 1 micron to 25 micron.
Time resolved photoluminescence
A time resolved luminescence spectroscopy system is equipped with one GaAs PMT, one InGaAs PMT, and three MCT detectors to cover wavelength range from 0.3 microns to 12 microns. The system is capable of measuring time-resolved photoluminescence and electroluminescence from 10 K to 400 K with nano second resolution.