Publications

Selected Journal Papers

2018

  • J. Becker, C. M. Campbell, C.-Y. Tsai, Y. Zhao, M. Lassise, X.-H. Zhao, M. Boccard, Z. C. Holman, and Y.-H. Zhang, “Monocrystalline 1.7-eV-bandgap MgCdTe solar cell with 11.2% efficiency,” IEEE J. of Photovoltaics 8, 581-586
  • Xuanqi Huang, Hong Chen, Houqiang Fu, Izak Baranowski, Jossue Montes, Tsung-Han Yang, Kai Fu, Brendan P Gunning, Daniel D Koleske, Yuji Zhao, “Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron-and hole-blocking layers,” Applied Physics Letters 113 (4), 043501
  • Yuji Zhao, Houqiang Fu, George T Wang, Shuji Nakamura, “Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes,” Advances in Optics and Photonics 10 (1), 246-308

2017

  • J. Becker, M. Boccard, C. M. Campbell, Y. Zhao, M. Lassise, Z. C. Holman, and Y.-H. Zhang, Loss analysis of monocrystalline CdTe solar cells with 20% active-area efficiency, IEEE J. of Photovoltaics 7, 900-905
  • Zhao, X.-H. Zhao, Y.-H. Zhang, Radiative recombination dominated monocrystalline CdTe/MgCdTe double-heterostructures, IEEE J. of Photovoltaics 7, 690-694
  • X.-H. Zhao, S. Liu, C. M. Campbell, Y. Zhao, M. B. Lassise, and Y.-H. Zhang, Ultralow interface recombination velocity (~1 cm/s) at CdTe/MgxCd1-xTe heterointerface, IEEE J. of Photovoltaics 7, 913-918
  • J. Becker, C. M. Campbell, Y. Zhao, M. Boccard, D. Mohanty, M. Lassise, E. Suarez, I. Bhat, Z. C. Holman, Y.-H. Zhang, Monocrystalline CdTe/MgCdTe Double-Heterostructure Solar Cells with ZnTe Hole Contacts, IEEE J. of Photovoltaics 7, 307-312
  • X. Huang, H. Chen, H. Fu, I. Baranowski, J. Montes, T. H. Yang, K. Fu, B. P. Gunning, D. D. Koleske, and Y. Zhao, “Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers”, Appl. Phys. Lett., vol. 113, 043501
  • X. Huang, H. Fu, H. Chen, Z. Lu, I. Baranowski, J. Montes, T. H. Yang, B. P. Gunning, D. Koleske, and Y. Zhao, “Reliability analysis of InGaN/GaN multi-quantum-well (MQW) solar cells under thermal stress“, Appl. Phys. Lett., vol. 111, 23351
  • H. Fu, X. Huang, H. Chen, Z. Lu, I. Baranowski, and Y. Zhao, “Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers“, Appl. Phys. Lett., vol. 111, 152102
  • H. Fu, X. Huang, H. Chen, Z. Lu, and Y. Zhao, “Fabrication and characterization of ultra-wide bandgap AlN based Schottky diodes on sapphire by MOCVD“, IEEE J. Electron Devices Soc., vol. 5, 518
  • H. Fu, X. Zhang, X. Huang, I. Baranowski, H. Chen, Z. Lu, J. Montes, and Y. Zhao, “Demonstration of AlN Schottky barrier diodes with blocking voltage over 1kV“, IEEE Electron Device Lett., vol. 38, 1286
  • X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao,  “Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency“, Appl. Phys. Lett., vol. 110, 161105
  • H. Chen, H. Fu, X. Huang, Z. Lu, X. Zhang, J. Montes, and Y. Zhao, “Optical cavity effects in InGaN core-shell light-emitting diodes with metallic coating“, IEEE Photonics J., vol. 9, 8200828
  • Xiahui Chen, Chu Wang, Yu Yao*, and Chao Wang*, “Plasmonic Vertically Coupled Complementary Antennas for Dual-Mode Infrared Molecule Sensing“, ACS Nano Article ASAPDOI: 10.1021/acsnano.7b02687 (* corresponding authors)

2016

  • Z.-Y. He, C. M. Campbell, M. B. Lassise, Z.-Y. Lin, J. J. Becker, Y. Zhao, M. Boccard, Z. Holman, Y.-H. Zhang, CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates, Appl. Phys. Lett. 109, 121112
  • Zhao, M. Boccard, S. Liu, J. Becker, X.-H. Zhao, C. M. Campbell, E. Suarez, M. B. Lassise, Z. Holman, and Y.-H. Zhang, Monocrystalline CdTe Solar Cells with Open-Circuit Voltage Over 1V and Efficiency of 17%, Nature Energy 1, 16067
  • X.-H. Zhao, S. Liu, Y. Zhao, C. M. Campbell, M. B. Lassise, Y.-S. Kuo, Y.-H. Zhang, Electrical and Optical Properties of n-Type Indium-Doped CdTe/MgCdTe Double Heterostructures, IEEE J. of Photovoltaics 6, 552 – 556
  • Suh, K. M. Yu, D. Fu, X. Liu, F. Yang, J. Fan, D. J. Smith, Y. -H. Zhang, J. K. Furdyna, C. Dames, W. Walukiewicz, J. Wu, Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi2Te3 by Multifunctionality of Native Defects, Advanced Materials 27, 3681
  • H. Fu, Z. Lu, X. Huang, H. Chen, and  Y. Zhao,  “Crystal orientation dependent Intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications“, J. Appl. Phys., vol. 119, 174502

2015

  • Z.-Y. Lin, S. Liu, E.H. Steenbergen, and Y.-H. Zhang, Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices, Appl. Phys. Lett., 107, 201107
  • X.-M. Shen, Z.-Y. He, S. Liu, Z.-Y. Lin, Y.-H. Zhang, D. J. Smith, M. R. McCartney, An indirect method of studying band alignments in nBn photodetectors using off-axis electron holography, Appl. Phys. Letts.  107, 122109
  • Liu, X.-H. Zhao, C. M. Campbell, M. B. Lassise, Y. Zhao, Y.-H. Zhang, Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1-xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy, Appl. Phys. Letts. 107, 041120
  • Liu, X.-H. Zhao, C. M. Campbell, M. B. Lassise, Y. Zhao, Y.-H. Zhang, Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1-xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy, Appl. Phys. Letts. 107, 041120
  • D. Prins, M. K. Lewis, Z.L. Bushell, S. J. Sweeney, S. Liu, Y.-H. Zhang, Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors, Appl. Phys. Letts. 106, 171111
  • Liu, W. Yang, J. Becker, Y.-S. Kuo, Y.-H. Zhang, Non-Lambertian Reflective Back Scattering and Its Impact on Device Performance of Ultrathin GaAs Single-Junction Solar Cells, IEEE J. of Photovoltaics 3, 832-839

Selected Invited Presentations

2018

  • Y.-H. Zhang, “Semiconductor Heterovalent Interfaces, Structures and Their Application in Devices,” the 20th International Conference on Molecular Beam Epitaxy, Shanghai, September 2-7, 2018
  • Y.-H. Zhang, “Crystalline CdTe/MgCdTe and Mg0.13Cd0.77Te/MgxCd1-xTe double heterostructures and solar cells,” MRS Spring Meeting, Phoenix, April 2-6, 2018

2017

  • Y.-H. Zhang, “Heterovalent II-VI and III-V semiconductor integration: A platform for solar cell and other optoelectronic device applications,” 2017 IEEE Photonics Conference (IPC) Orlando, Oct. 1-5, 2017
  • Y.-H. Zhang, “II-VI and III-V semiconductor integration and their applications in solar cells and other optoelectronic devices,” Light Conference 2016-Winter Summit, 9-13 January 2017, Changchun, China.

2016

  • Y.-H. Zhang, “CdTe/MgCdTe Double Heterostructures and Solar Cells with a VOC greater than 1 V and an efficiency of 18%,” 2016 US Workshop on the Physics and Chemistry of II-VI Materials, Baltimore, October 18-20, 2016
  • Y.-H. Zhang, “InAs/InAsSb type-II superlattices: material properties and device applications,” the 13th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-XIII), Beijing, Sept. 18-22, 2016
  • Y.-H. Zhang, “Ga-free InAs/InAsSb type-II superlattice and its applications to IR lasers and photodetectors,” APS March Meeting, Baltimore, 2016

2015

  • Y.-H. Zhang,” InAs/InAsSb superlattices and optoelectronic devices,” 2015 IEEE Summer Topicals Meeting Series, Nassau, Bahama, 13 – 15 July 2015

2014

  • Y.-H. Zhang, S. L. Chuang, D. Wasserman, J. M. Zuo, R. D. Dupuis, S. R. Johnson, D. J. Smith, and Y. Zhang. “Fundamental Study of Defects and Their Reduction in Type-II Superlattice Materials,” DOD VISTA program review, Teledyne Scientific & Imaging, Thousand Oaks, CA, Dec. 10-11, 2014.

2013

  • W. Yang, J.-J. Li, J. Becker, S. Liu, B. Landini, K. Campman, and Y.-H. Zhang, “Ultra-Thin GaAs Single-Junction Solar Cells Integrated with a Reflective Back Scattering Layer,” 2013 China Photovoltaic Technology International Conference, Shanghai, March 19-21, 2013.
  • Y.-H. Zhang, “Ga-Free InAs/InAsSb type-II superlattice: its past, present and future,” SPIE Photonics West, San Francisco, Feb. 2013.

2012

  • D. J. Smith, “Structural properties of InAs/InAs1-xSbx type-II superlattices”, at SPIE OPTO 2012 (San Francisco, CA) January 21-26, 2012.
  • Y.-H. Zhang, “Integration of Lattice-Matched 6.1Â II-VI/III-V Semiconductors for Optoelectronic Device Applications,” The U.S. Workshop on the Physics and Chemistry of II-VI Materials, Seattle, November 27-29, 2012.
  • Y.-H. Zhang, “IR Detectors Based on Ga-Free InAs/InAsSb type-II Superlattices and Two-Terminal Multi-Color FPAs,” the 7th Annual IDGA’s Night Vision Systems, Arlington, Virginia July 23-25, 2012.

2011

  • D. J. Smith, “Structural characterization of III-nitride materials and devices”, at SPIE OPTO 2011 (San Francisco, CA) January 22-27, 2011.
  • Stephen M. Goodnick and Christiana Honsberg, “Ultrafast Carrier Dynamics and Third Generation Photovoltaics,” presented at the Nano and Giga Challenges in Electronics, Photonics and Renewable Energy Symposium and Summer School (Tutorial Lectures) Moscow – Zelenograd, Russia, September 12-16, 2011.
  • Stephen M. Goodnick and Christiana Honsberg, “Nanoscale Photovoltaics and the Terawatt Challenge,” tutorial presented at the Nano and Giga Challenges in Electronics, Photonics and Renewable Energy Symposium and Summer School (Tutorial Lectures) Moscow – Zelenograd, Russia, September 12-16, 2011.
  • Stephen M. Goodnick and Christiana B. Honsberg, “Ultrafast carrier relaxation and nonequilibrium phonons in hot carrier solar cells,” presented at the 37th IEEE Photovoltaics Specialists Conference, Seattle, WA, June 20-24th, 2011.

2010

  • Y.-H. Zhang, J. K. Furdyna, J.-J. Li, X. Liu, S. Wang, D. Ding, “CdSe/CdTe type-II superlattices and II-VI/III-V heterostructures grown on GaSb substrates for optoelectronic devices,” ICSNN-2010, Beijing, Jul 18-23, 2010
  • Y.-H. Zhang, “Monolithic integration of II-VI/III-V semiconductors on 6.1 A substrate for optoelectronic device applications,” 2010 International Symposium on Optoelectronic Materials and Devices, Chicago, July 12-13, 2010.
  • Y.-H. Zhang, “A Semi-analytical Model and Characterization Techniques for CPV Multi-junction Solar Cells,” OSA SOLAR, Tucson, Jun 7-9, 2010.
  • Y.-H. Zhang, J. Furdyna, X. Liu, and D. Ding, “MBE growth of 6.1 Å II-VI and III-V semiconductors on GaSb substrates and their potential device applications,” MBE Taiwan 2010 Conference, Taipei, May 24-25, 2010.

2009

  • Y.-H. Zhang, “Novel multijunction solar cells,” International Conference on Advance Materials, Rio de Janeiro, Brazil, 2009

2007

  • F. A. Ponce, “Structural and electronic properties of defects and strained interfaces in nitride semiconductors” Third Asia-Pacific Workshop on Widegap Semiconductors (APWS-2007). Jeonju, Korea. 11-14 March 2007.
  • F. A. Ponce, “Improving the internal quantum efficiency of InGaN-based visible LEDs.” First International Conference on Display LEDs (ICDL’07). Seoul, Korea. 31 January to 2 February 2007.
  • Kong-Thon Tsen, “Studies of LO phonons in GaN by subpicosecond time-resolved Raman spectroscopy,” presented at SPIE Photonic West’07 International Symposium – Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI (San Jose, Jan. 24, 2007)
  • Kong-Thon Tsen, “Subpicosend time-resolved Raman studies of LO phonons in GaN,” presented at SPIE Photonic West’07 Int. Conference on Gallium Nitride Materials and Devices II (San Jose, Jan. 22, 2007)

2006

  • B. Towe, “Neurostimulation using Piezoelectric MicroImplants“, at Medtronic Inc., Tempe, Az. December 9, 2006
  • J. Menendez, “Phonon-phonon interactions in suspended carbon nanotubes” (MRS Fall Meeting, 2006)
  • F. A. Ponce, “Lattice relaxation and electronic properties of thick InN epilayers grown on GaN by MOCVD” , 3rd International Indium Nitride Workshop (IINW-3). Ilhabela, Brazil. 12-16 November 2006 , 11/2006
  • C.-Z. Ning, “Compound Semiconductor Nanowires as Nanolasers: Theory and Experiment,” Invited talk at International Symposium of Compound Semiconductors, Aug 13-17, 2006, Vancouver, CA
  • C.-Z. Ning, “Nanowire based nanophotonics and nanolasers: progress in theory and experiment,” Plenary talk at 13th Conference on Optical Properties of Condensed Matter, Aug. 4-9, 2006, Xiamen, China
  • F. A. Ponce, “Nanoscale properties of InGaN quantum wells for white light generation,” Encounter SBPM at 2006 (Brazilian MRS meeting), Florianopolis, Brazil. 9-12 October 2006 , 10/2006
  • F. A. Ponce, “Microstructure of AlN grown by lateral epitaxial overgrowth,” International Workshop of Nitride Semiconductors (IWN-2006), Osaka, Japan. 23-29 October 2006, 10/2006
  • F. A. Ponce, “Properties of semipolar InGaN quantum wells,” International Workshop of Nitride Semiconductors (IWN-2006), Osaka, Japan. 23-29 October 2006, 10/2006
  • F. A. Ponce, “Misfit strain relaxation mechanisms in InGaN epitaxy on GaN.” The Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 06), Fountain Hills, Arizona, 02/2006
  • C.-Z. Ning, “Semiconductor Nanowire Nanolasers,” Invited talk at IEEE Conference on Emerging Technologies, Singapore, Jan 11, 2006

2005

  • C.-Z. Ning, “Possibility of two-photon lasing using intersubband transitions in semiconductor nanostructures,” 35th Conference of Physics of Quantum Electronics, Snowbird, UT, (2005)
  • F. A. Ponce, “Materials for the 21st Century,” International Conference on Spectroscopy. Lima, Peru , 05/2005
  • F. A. Ponce, “Influence of microstructure on the internal quantum efficiency of light emitting devices based on nitride semiconductors,” 2005 International Forum on LED and Solid State Lighting, Xiamen, China, 04/2005
  • C.-Z. Ning, “Is a two-photon laser feasible using intersubband transitions in semiconductor nanostructures?,” Conference of Physics and Simulation of Optoelectronic Devices, Photonics West, San Jose, CA, Jan. 22-27, 2005