Publications

Selected Journal Papers

2013

  • W. Yang, J.-J. Li, J. Becker, S. Liu, B. Landini, K. Campman, and Y.-H. Zhang, Ultra-Thin GaAs Single-Junction Solar Cells Integrated with a Reflective Back Scattering Layer, 2013 China Photovoltaic Technology International Conference, Shanghai, March 19-21, 2013.
  • Y.-H. Zhang, Ga-Free InAs/InAsSb type-II superlattice: its past, present and future, SPIE Photonics West, San Francisco, Feb. 2013.

2012

  • D. J. Smith, “Structural properties of InAs/InAs1-xSbx type-II superlattices”, at SPIE OPTO 2012 (San Francisco, CA) January 21-26, 2012.
  • Y.-H. Zhang, Integration of Lattice-Matched 6.1Â II-VI/III-V Semiconductors for Optoelectronic Device Applications, The U.S. Workshop on the Physics and Chemistry of II-VI Materials, Seattle, November 27-29, 2012.
  • Y.-H. Zhang, IR Detectors Based on Ga-Free InAs/InAsSb type-II Superlattices and Two-Terminal Multi-Color FPAs, the 7th Annual IDGA’s Night Vision Systems, Arlington, Virginia July 23-25, 2012.

2011

  • D. J. Smith, “Structural characterization of III-nitride materials and devices”, at SPIE OPTO 2011 (San Francisco, CA) January 22-27, 2011.
  • Stephen M. Goodnick and Christiana Honsberg, “Ultrafast Carrier Dynamics and Third Generation Photovoltaics,” presented at the Nano and Giga Challenges in Electronics, Photonics and Renewable Energy Symposium and Summer School (Tutorial Lectures) Moscow – Zelenograd, Russia, September 12-16, 2011.
  • Stephen M. Goodnick and Christiana Honsberg, “Nanoscale Photovoltaics and the Terawatt Challenge,” tutorial presented at the Nano and Giga Challenges in Electronics, Photonics and Renewable Energy Symposium and Summer School (Tutorial Lectures) Moscow – Zelenograd, Russia, September 12-16, 2011.
  • Stephen M. Goodnick and Christiana B. Honsberg, “Ultrafast carrier relaxation and nonequilibrium phonons in hot carrier solar cells,” presented at the 37th IEEE Photovoltaics Specialists Conference, Seattle, WA, June 20-24th, 2011.

2010

  • Y.-H. Zhang, J. K. Furdyna, J.-J. Li, X. Liu, S. Wang, D. Ding, CdSe/CdTe type-II superlattices and II-VI/III-V heterostructures grown on GaSb substrates for optoelectronic devices, ICSNN-2010, Beijing, Jul 18-23, 2010
  • Y.-H. Zhang, Monolithic integration of II-VI/III-V semiconductors on 6.1 A substrate for optoelectronic device applications, 2010 International Symposium on Optoelectronic Materials and Devices, Chicago, July 12-13, 2010.
  • Y.-H. Zhang, A Semi-analytical Model and Characterization Techniques for CPV Multi-junction Solar Cells, OSA SOLAR, Tucson, Jun 7-9, 2010.
  • Y.-H. Zhang, J. Furdyna, X. Liu, and D. Ding, MBE growth of 6.1 Å II-VI and III-V semiconductors on GaSb substrates and their potential device applications, MBE Taiwan 2010 Conference, Taipei, May 24-25, 2010.

2009

  • Y.-H. Zhang, Novel multijunction solar cells, International Conference on Advance Materials, Rio de Janeiro, Brazil, 2009

2007

  • F. A. Ponce, Structural and electronic properties of defects and strained interfaces in nitride semiconductors Third Asia-Pacific Workshop on Widegap Semiconductors (APWS-2007). Jeonju, Korea. 11-14 March 2007. http://www.apws2007.org/
  • F. A. Ponce, Improving the internal quantum efficiency of InGaN-based visible LEDs. First International Conference on Display LEDs (ICDL’07). Seoul, Korea. 31 January to 2 February 2007. http://www.icdlkorea.com/
  • Kong-Thon Tsen, Studies of LO phonons in GaN by subpicosecond time-resolved Raman spectroscopy, presented at SPIE Photonic West’07 International Symposium – Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI (San Jose, Jan. 24, 2007)
  • Kong-Thon Tsen, Subpicosend time-resolved Raman studies of LO phonons in GaN, presented at SPIE Photonic West’07 Int. Conference on Gallium Nitride Materials and Devices II (San Jose, Jan. 22, 2007)

2006

  • B. Towe, “Neurostimulation using Piezoelectric MicroImplants”, at Medtronic Inc., Tempe, Az. December 9, 2006
  • J. Menendez, Phonon-phonon interactions in suspended carbon nanotubes (MRS Fall Meeting, 2006)
  • F. A. Ponce, Lattice relaxation and electronic properties of thick InN epilayers grown on GaN by MOCVD , 3rd International Indium Nitride Workshop (IINW-3). Ilhabela, Brazil. 12-16 November 2006 , 11/2006
  • C.-Z. Ning, Compound Semiconductor Nanowires as Nanolasers: Theory and Experiment, Invited talk at International Symposium of Compound Semiconductors, Aug 13-17, 2006, Vancouver, CA
  • C.-Z. Ning, Nanowire based nanophotonics and nanolasers: progress in theory and experiment, Plenary talk at 13th Conference on Optical Properties of Condensed Matter, Aug. 4-9, 2006, Xiamen, China
  • F. A. Ponce, Nanoscale properties of InGaN quantum wells for white light generation, Encounter SBPMat 2006 (Brazilian MRS meeting), Florianopolis, Brazil. 9-12 October 2006 , 10/2006
  • F. A. Ponce, Microstructure of AlN grown by lateral epitaxial overgrowth, International Workshop of Nitride Semiconductors (IWN-2006), Osaka, Japan. 23-29 October 2006, 10/2006
  • F. A. Ponce, Properties of semipolar InGaN quantum wells, International Workshop of Nitride Semiconductors (IWN-2006), Osaka, Japan. 23-29 October 2006, 10/2006
  • F. A. Ponce, Misfit strain relaxation mechanisms in InGaN epitaxy on GaN. The Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 06), Fountain Hills, Arizona, 02/2006
  • C.-Z. Ning, Semiconductor Nanowire Nanolasers, Invited talk at IEEE Conference on Emerging Technologies, Singapore, Jan 11, 2006

2005

  • C.-Z. Ning, Possibility of two-photon lasing using intersubband transitions in semiconductor nanostructures, 35th Conference of Physics of Quantum Electronics, Snowbird, UT, (2005)
  • F. A. Ponce, Materials for the 21st Century, International Conference on Spectroscopy. Lima, Peru , 05/2005
  • F. A. Ponce, Influence of microstructure on the internal quantum efficiency of light emitting devices based on nitride semiconductors, 2005 International Forum on LED and Solid State Lighting, Xiamen, China, 04/2005
  • C.-Z. Ning, Is a two-photon laser feasible using intersubband transitions in semiconductor nanostructures?, Conference of Physics and Simulation of Optoelectronic Devices, Photonics West, San Jose, CA, Jan. 22-27, 2005

Selected Invited Presentations

2013

  • W. Yang, J.-J. Li, J. Becker, S. Liu, B. Landini, K. Campman, and Y.-H. Zhang, Ultra-Thin GaAs Single-Junction Solar Cells Integrated with a Reflective Back Scattering Layer, 2013 China Photovoltaic Technology International Conference, Shanghai, March 19-21, 2013.
  • Y.-H. Zhang, Ga-Free InAs/InAsSb type-II superlattice: its past, present and future, SPIE Photonics West, San Francisco, Feb. 2013.

2012

  • D. J. Smith, “Structural properties of InAs/InAs1-xSbx type-II superlattices”, at SPIE OPTO 2012 (San Francisco, CA) January 21-26, 2012.
  • Y.-H. Zhang, Integration of Lattice-Matched 6.1Â II-VI/III-V Semiconductors for Optoelectronic Device Applications, The U.S. Workshop on the Physics and Chemistry of II-VI Materials, Seattle, November 27-29, 2012.
  • Y.-H. Zhang, IR Detectors Based on Ga-Free InAs/InAsSb type-II Superlattices and Two-Terminal Multi-Color FPAs, the 7th Annual IDGA’s Night Vision Systems, Arlington, Virginia July 23-25, 2012.

2011

  • D. J. Smith, “Structural characterization of III-nitride materials and devices”, at SPIE OPTO 2011 (San Francisco, CA) January 22-27, 2011.
  • Stephen M. Goodnick and Christiana Honsberg, “Ultrafast Carrier Dynamics and Third Generation Photovoltaics,” presented at the Nano and Giga Challenges in Electronics, Photonics and Renewable Energy Symposium and Summer School (Tutorial Lectures) Moscow – Zelenograd, Russia, September 12-16, 2011.
  • Stephen M. Goodnick and Christiana Honsberg, “Nanoscale Photovoltaics and the Terawatt Challenge,” tutorial presented at the Nano and Giga Challenges in Electronics, Photonics and Renewable Energy Symposium and Summer School (Tutorial Lectures) Moscow – Zelenograd, Russia, September 12-16, 2011.
  • Stephen M. Goodnick and Christiana B. Honsberg, “Ultrafast carrier relaxation and nonequilibrium phonons in hot carrier solar cells,” presented at the 37th IEEE Photovoltaics Specialists Conference, Seattle, WA, June 20-24th, 2011.

2010

  • Y.-H. Zhang, J. K. Furdyna, J.-J. Li, X. Liu, S. Wang, D. Ding, CdSe/CdTe type-II superlattices and II-VI/III-V heterostructures grown on GaSb substrates for optoelectronic devices, ICSNN-2010, Beijing, Jul 18-23, 2010
  • Y.-H. Zhang, Monolithic integration of II-VI/III-V semiconductors on 6.1 A substrate for optoelectronic device applications, 2010 International Symposium on Optoelectronic Materials and Devices, Chicago, July 12-13, 2010.
  • Y.-H. Zhang, A Semi-analytical Model and Characterization Techniques for CPV Multi-junction Solar Cells, OSA SOLAR, Tucson, Jun 7-9, 2010.
  • Y.-H. Zhang, J. Furdyna, X. Liu, and D. Ding, MBE growth of 6.1 Å II-VI and III-V semiconductors on GaSb substrates and their potential device applications, MBE Taiwan 2010 Conference, Taipei, May 24-25, 2010.

2009

  • Y.-H. Zhang, Novel multijunction solar cells, International Conference on Advance Materials, Rio de Janeiro, Brazil, 2009

2007

  • F. A. Ponce, Structural and electronic properties of defects and strained interfaces in nitride semiconductors Third Asia-Pacific Workshop on Widegap Semiconductors (APWS-2007). Jeonju, Korea. 11-14 March 2007. http://www.apws2007.org/
  • F. A. Ponce, Improving the internal quantum efficiency of InGaN-based visible LEDs. First International Conference on Display LEDs (ICDL’07). Seoul, Korea. 31 January to 2 February 2007. http://www.icdlkorea.com/
  • Kong-Thon Tsen, Studies of LO phonons in GaN by subpicosecond time-resolved Raman spectroscopy, presented at SPIE Photonic West’07 International Symposium – Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI (San Jose, Jan. 24, 2007)
  • Kong-Thon Tsen, Subpicosend time-resolved Raman studies of LO phonons in GaN, presented at SPIE Photonic West’07 Int. Conference on Gallium Nitride Materials and Devices II (San Jose, Jan. 22, 2007)

2006

  • B. Towe, “Neurostimulation using Piezoelectric MicroImplants”, at Medtronic Inc., Tempe, Az. December 9, 2006
  • J. Menendez, Phonon-phonon interactions in suspended carbon nanotubes (MRS Fall Meeting, 2006)
  • F. A. Ponce, Lattice relaxation and electronic properties of thick InN epilayers grown on GaN by MOCVD , 3rd International Indium Nitride Workshop (IINW-3). Ilhabela, Brazil. 12-16 November 2006 , 11/2006
  • C.-Z. Ning, Compound Semiconductor Nanowires as Nanolasers: Theory and Experiment, Invited talk at International Symposium of Compound Semiconductors, Aug 13-17, 2006, Vancouver, CA
  • C.-Z. Ning, Nanowire based nanophotonics and nanolasers: progress in theory and experiment, Plenary talk at 13th Conference on Optical Properties of Condensed Matter, Aug. 4-9, 2006, Xiamen, China
  • F. A. Ponce, Nanoscale properties of InGaN quantum wells for white light generation, Encounter SBPMat 2006 (Brazilian MRS meeting), Florianopolis, Brazil. 9-12 October 2006 , 10/2006
  • F. A. Ponce, Microstructure of AlN grown by lateral epitaxial overgrowth, International Workshop of Nitride Semiconductors (IWN-2006), Osaka, Japan. 23-29 October 2006, 10/2006
  • F. A. Ponce, Properties of semipolar InGaN quantum wells, International Workshop of Nitride Semiconductors (IWN-2006), Osaka, Japan. 23-29 October 2006, 10/2006
  • F. A. Ponce, Misfit strain relaxation mechanisms in InGaN epitaxy on GaN. The Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 06), Fountain Hills, Arizona, 02/2006
  • C.-Z. Ning, Semiconductor Nanowire Nanolasers, Invited talk at IEEE Conference on Emerging Technologies, Singapore, Jan 11, 2006

2005

  • C.-Z. Ning, Possibility of two-photon lasing using intersubband transitions in semiconductor nanostructures, 35th Conference of Physics of Quantum Electronics, Snowbird, UT, (2005)
  • F. A. Ponce, Materials for the 21st Century, International Conference on Spectroscopy. Lima, Peru , 05/2005
  • F. A. Ponce, Influence of microstructure on the internal quantum efficiency of light emitting devices based on nitride semiconductors, 2005 International Forum on LED and Solid State Lighting, Xiamen, China, 04/2005
  • C.-Z. Ning, Is a two-photon laser feasible using intersubband transitions in semiconductor nanostructures?, Conference of Physics and Simulation of Optoelectronic Devices, Photonics West, San Jose, CA, Jan. 22-27, 2005