Center News
Congratulations to Dr. Yong-Hang Zhang on His Appointment to the Scientific Advisory Board of the Paul-Drude-Institute
r. Yong-Hang Zhang has been appointed to the Scientific Advisory Board of the Paul-Drude-Institute for Solid State Electronics (PDI), a leading institute within the Leibniz Association in Berlin, Germany.
Dr. Zhang is well known for his contributions to molecular beam epitaxy (MBE) and advanced semiconductor heterostructures, enabling the production of high-quality materials for next-generation electronic and optoelectronic devices.
Congratulations to Nathan Rosenblatt on his nomination for the Best Student Presentation Award at IEEE PVSC 53!
Nathan Rosenblatt presented the group’s work (spearheaded by Xin Qi, Zheng Ju, and Xiaoyang Liu) on interface Fermi-level engineering for efficient CdTe solar cells without p-type doping at PVSC 2025. The talk was nominated for a best student presentation award and presents our results recently published in Solar RRL
Congratulations Dr. Preston Webster on winning the Young Investigator Award for NAMBE 2025!
July 22, 2025
Congratulations to Preston Webster for winning the prestigious Young Investigator Award of the NAMBE 2025. Preston is our center alumni and received his PhD under the supervision of Shane Johnson in very close collaboration with our MBE Optoelectronics Group in a MURI program. We are very proud of his achievements.
MBE Optoelectronics Group’s Publication Selected for Cover Page in Solar RRL Again!
July 7, 2025
Congratulations again to the MBE Optoelectronics Group for another recent paper chosen by Solar RRL as the cover page story.
A recent article by the ASU MBE Optoelectronics group has been selected as the cover article in Solar RRL. The paper, titled “Monocrystalline CdSeTe/MgCdTe Double-Heterostructure Solar Cells”, reports monocrystalline CdSeTe/MgCdTe double-heterostructure solar cells with varying Se compositions in the absorber layers that are grown on InSb substrates by using molecular beam epitaxy.
ASU MBE Optoelectronics Group’s Work Selected as Cover Article in Solar RRL
June 26, 2025
Congratulations to the MBE Optoelectronics Group for their recent paper chosen by Solar RRL as a cover page story.
A recent article by the ASU MBE Optoelectronics group has been selected as the cover article in Solar RRL. The paper, titled “Interface Fermi-Level Engineering for Selective Hole Extraction Without P-Type Doping in CdTe Solar Cells to Reach High Open-Circuit Voltage (>1 V)”, reports an approach to achieving over 1 V open-circuit voltage without p-type doping, supported by a physical model developed by the authors.
Interface Fermi-Level Engineering: An Innovative Approach to Doping Challenges
May 8, 2025
Achieving effective p-type doping remains a major challenge in CdTe, nitrides, and various oxides. The high dopant activation energies in these materials limit the concentration of ionized carriers, thereby impeding device performance. To address this issue, we have developed an innovative approach—interface Fermi-level engineering—using interface states and charge transfer effects to tailor Fermi level without…
ASU MBE Group Organized a Spring Reunion at Evelyn Hallman Park
April 12, 2025
ASU MBE Group organized a spring reunion at Evelyn Hallman Park in Tempe on April 12. The event brought together current group members, alumni, and friends from other research groups for a fun and relaxing day outdoors. Everyone enjoyed good food, games, and conversations. In addition to catching up socially, some attendees also discussed their…
Dinusha’s work on high-temperature performance of AlN SBD has been published on IEEE TED! Congratulations!
April 2025
In this work, high-voltage aluminum nitride (AlN) Schottky barrier diodes (SBDs) were fabricated on single-crystal AlN substrates with varying anode-to-cathode distances LAC of 5, 10, 25, and 50 μm, and their high-temperature characteristics were comprehensively investigated. This work can serve as an important guideline for the future development of high-temperature and high-voltage AlN electronics.
Congratulations to Dr. Xin Qi on his successful PhD defense
April 4, 2025
We are pleased to congratulate Dr. Xin Qi on the successful defense of his Ph.D. dissertation, entitled “Study of Thin-Film Cd(Se)Te/MgCdTe Double-Heterostructure Solar Cells and Novel Epitaxial Lift-off Techniques.” Dr. Qi will join Texas A&M University as a postdoctoral researcher. We wish him continued success in his academic career and look forward to future collaborations…
Jayashree was selected for the prestigious NSF Graduate Research Fellowship Program (GRFP) that supports outstanding graduate students in STEM. Congratulations!
April 2025
We are excited to share that Jayashree Adivarahan, an undergraduate researcher in the Fu lab, has won the prestigious NSF GRFP award! Jayashree is involved in and serves on the leadership team of student organizations like Engineers Without Borders and the Society of Women Engineers. She is interested in getting involved in research focused on AI/ML, semiconductor technology, and the growth and fabrication of devices.
Congratulations to Razine and Allison for the receiving of the ARCS Scholarship
February 26, 2025
We are excited to share that Razine and Allison have been awarded the ARCS Scholarship, a well-known honor that supports top graduate students in science and engineering. This award helps students continue their research by providing funding and recognition for their hard work. With this win, we keep our 15+ year record of receiving this…
Prof. Zhang Gives an Invited Talk at ECE Distinguished Seminar Series
October 24, 2024
On October 23, 2024, Prof. Yong-Hang Zhang presented an invited lecture titled “Antimonide Type-II Superlattices and Heterovalent Integration: From MBE Growth, Materials Physics, to Device Applications” at the University of Michigan. His talk explored advanced concepts in molecular beam epitaxy (MBE), materials physics, and their applications in cutting-edge device technologies. This lecture was part of…
The Fu lab’s work on 600V AlN Schottky barrier diodes with low ideality factor has been featured by Compound Semiconductor.
October 2024
This work is the first demonstration that simultaneously achieves an ultra-low ideality factor and a high breakdown voltage for AlN diodes. Read the full research paper here.
Congratulations to Dr. Tyler McCarthy on his successful PhD defense
July 9, 2024
Congratulations to Dr. Tyler McCarthy on his successful Ph.D. defense entitled “Molecular Beam Epitaxial Growth of Group-IV and Heterovalent Structures for Infrared Detectors and Quantum Transport Study”. Tyler will stay in our group to work as a postdoc. We are looking forward to making more progress in the future with Dr. Tyler McCarthy.