Dr. Yong-Hang Zhang has been appointed to the Scientific Advisory Board of the Paul-Drude-Institute for Solid State Electronics (PDI), a leading institute within the Leibniz Association in Berlin, Germany. Dr. Zhang is well known for his contributions to molecular beam epitaxy (MBE) and advanced semiconductor heterostructures, enabling the production of high-quality materials for next-generation electronic…

Nathan Rosenblatt presented the group’s work (spearheaded by Xin Qi, Zheng Ju, and Xiaoyang Liu) on interface Fermi-level engineering for efficient CdTe solar cells without p-type doping at PVSC 2025. The talk was nominated for a best student presentation award and presents our results recently published in Solar RRL

Congratulations to Preston Webster for winning the prestigious Young Investigator Award of the NAMBE 2025. Preston is our center alumni and received his PhD under the supervision of Shane Johnson in very close collaboration with our MBE Optoelectronics Group in a MURI program.  We are very proud of his achievements.

Congratulations again to the MBE Optoelectronics Group for another recent paper chosen by Solar RRL as the cover page story. A recent article by the ASU MBE Optoelectronics group has been selected as the cover article in Solar RRL. The paper, titled “Monocrystalline CdSeTe/MgCdTe Double-Heterostructure Solar Cells”, reports monocrystalline CdSeTe/MgCdTe double-heterostructure solar cells with varying Se compositions in the…

Congratulations to the MBE Optoelectronics Group for their recent paper chosen by Solar RRL as a cover page story. A recent article by the ASU MBE Optoelectronics group has been selected as the cover article in Solar RRL. The paper, titled “Interface Fermi-Level Engineering for Selective Hole Extraction Without P-Type Doping in CdTe Solar Cells to Reach High Open-Circuit…

Achieving effective p-type doping remains a major challenge in CdTe, nitrides, and various oxides. The high dopant activation energies in these materials limit the concentration of ionized carriers, thereby impeding device performance. To address this issue, we have developed an innovative approach—interface Fermi-level engineering—using interface states and charge transfer effects to tailor Fermi level without…

In this work, high-voltage aluminum nitride (AlN) Schottky barrier diodes (SBDs) were fabricated on single-crystal AlN substrates with varying anode-to-cathode distances LAC of 5, 10, 25, and 50 μm, and their high-temperature characteristics were comprehensively investigated. This work can serve as an important guideline for the future development of high-temperature and high-voltage AlN electronics.