Publications

Qi, X., Ju, Z., Liu, X., Gong, J., Lu, Y., Liu, Y., Hossain, R., Rosenblatt, N., McCarthy, T.T., McMinn, A.M., McCartney, M.R., Smith, D.J., Ma, Z. and Zhang, Y.-H., Interface Fermi-Level Engineering for Selective Hole Extraction Without p-Type Doping In Cdte Solar Cells to Reach High Open Circuit Voltage (>1 V). Solar RRL, 2025.

Ju, Z., Qi, X., Liu, X., Hossain, R., Wang, A., McCarthy, T., McMinn, A. and Zhang, Y.-H., Monocrystalline CdSeTe/MgCdTe Double-Heterostructure Solar Cells. Solar RRL, 2025.

Tyler T. McCarthy, Zheng Ju, Allison M. McMinn, Xin Qi, Fikri Aqariden, Pok-Kai Liao, Pradip Mitra, Yong-Hang Zhang; Suppression of indium out-diffusion during molecular beam epitaxy growth of CdTe on InSb substrates. Appl. Phys. Lett. 12 May 2025; 126 (19): 192103.

D. Wang, H. D. Ellis, D. H. Mudiyanselage, Z. He, B. Da, I. Rahama, I. Baranowski, S. Gangwal, D. Vasileska, K. Fu, and H. Fu, Multi-kV AlGaN/GaN heterojunction Schottky barrier diodes with hydrogen plasma guard array termination,” IEEE Electron Device Lett., in press, (2025).

D. H. Mudiyanselage, D. Wang, Z. He, B. Da, J. Xie, and H. Fu, “High-temperature electrical characteristics of high-voltage AlN Schottky barrier diodes on single-crystal AlN substrates,” IEEE Trans. Electron Devices 72, 1637 (2025).

Z. Ju, X. Qi, S. Schaefer, M. R. McCartney, D. J. Smith, A. V. G. Chizmeshya, T. McCarthy, A. McMinn, S. Grover, and Y.-H. Zhang. CdSe with mixed zincblende and wurtzite phases grown on lattice-matched InAs substrates using molecular beam epitaxy. IEEE Journal of Photovoltaics, 14(5):752–757, 2024.

Tyler T. McCarthy, Allison M. McMinn, Xiaoyang Liu, Razine Hossain, Xin Qi, Zheng Ju, Mark Mangus, Shui-Qing Yu, Yong-Hang Zhang; Molecular beam epitaxy growth and characterization of GePb alloys. J. Vac. Sci. Technol. B 1 2024.

B. Da, D. H. Mudiyanselage, D. Wang, Z. He, and H. Fu, “High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates,” Appl. Phys. Express 17, 104002 (2024).

D. H. Mudiyanselage, D. Wang, B. Da, Z. He, and H. Fu, “Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor,” Appl. Phys. Express 17, 074001 (2024).

Haris Naeem Abbasi, Xin Qi, Jiarui Gong, Zheng Ju, Seunghwan Min, Yong-Hang Zhang, Zhenqiang Ma, Passivation of CdTe/MgCdTe double heterostructure by dielectric thin films deposited using atomic layer deposition, J. Appl. Phys. 134, 135304 (2023).

D. Wang, D. H. Mudiyanselage, and H. Fu, “Design of kV-class and low RON E-mode β-Ga2O3 current aperture vertical transistors with delta-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructure,” IEEE Trans. Electron Devices 70, 5795 (2023).

Jia Ding, Calli M. Campbell, Jacob J. Becker, Cheng-Ying Tsai, Stephen T. Schaefer, Tyler T. McCarthy, Mathieu Boccard, Zachary C. Holman, and Yong-Hang Zhang, Monocrystalline 1.7-eV MgCdTe solar cells, J. Appl. Phys. 131, 023107 (2022).

Y. Ma, T. Chen, X. Zhang, W. Tang, B. Feng, Y. Hu, L. Zhang, X. Zhou, X. Wei, K. Xu, D. Mudiyanselage, H. Fu, and B. Zhang, “High-photoresponsivity self-powered α-,ε-, and β-Ga2O3/p-GaN heterojunction UV photodetectors with an in situ GaON layer by MOCVD,” ACS Appl. Mater. Interfaces 14, 35194 (2022).

Tyler T. McCarthy, Zheng Ju, Stephen Schaefer, Shui-Qing Yu, Yong-Hang Zhang; Momentum(k)-space carrier separation using SiGeSn alloys for photodetector applications. J. Appl. Phys. 14 December 2021; 130 (22): 223102.

Y. Ma, B. Feng, X. Zhang, T. Chen, W. Tang, L. Zhang, T. He, X. Zhou, X. Wei, H. Fu, K. Xu, S. Ding, and B. Zhang, “High-performance β-Ga2O3 solar-blind ultraviolet photodetectors epitaxially grown on (110) TiO2 substrates by metalorganic chemical vapor deposition,” Vacuum 191, 110402 (2021).

Cheng-Ying Tsai, Yang Zhang, Zheng Ju, and Yong-Hang Zhang, Study of vertical hole transport in InAs/InAsSb type-II superlattices by steady-state and time-resolved photoluminescence spectroscopy, Appl. Phys. Lett. 116, 201108 (2020).

Maxwell B. Lassise, Tyler T. McCarthy, Brian D. Tracy, David J. Smith and Yong-Hang Zhang, Molecular beam epitaxial growth and structural properties of Heterocrystalline and heterovalent PbTe/CdTe/InSb structures, Journal of Applied Physics 126, 045708(2019).

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