ASU MBE Group at ICMBE 2026

Three group members attended ICMBE 2026, July 12–16 in Ann Arbor, MI.

Prof. Zhang received the Al Cho MBE Award, the highest honor in the international MBE community, recognizing fundamental and lasting contributions to MBE science, technology, and MBE-enabled research. He delivered the award plenary talk, “Heterostructures and Superlattices: From Isovalent to Heterovalent and Heterocrystalline Artificial Semiconductors—No End in Sight,” highlighting the evolution of artificial semiconductors and new opportunities enabled by engineering composition, strain, interfaces, and crystal structure.

Allison McMinn gave two oral presentations comparing InAs/InAsSb and InAs/GaInSbT2SLs for IR applications and exploring strain-engineered SiGe/GeSn SLs. Xiaoyang Liu presented an oral talk on design rules and XRD analysis of strain-balanced SLs and a poster on extracting structural parameters and growth rates from XRD of SiGe/GeSn SLs.